Samsung's next-generation NAND Flash for SSDs will offer over 900+ layers, with two stacks bonded together for increased storage capacities. Samsung Wants To Bond Two NAND Cells Together, Forming A Large 900-1000+ Layer Storage Solution For Future SSDs Last month, we reported that Samsung was working towards 1000-layer NAND using brand new materials and bonding technologies. At the VLSI Symposium 2026, Samsung has revealed its full plans on how they aim to achieve that goal. In its latest slide, Samsung states that there's a big demand for high-capacity SSDs, and they are working towards an accelerated roadmap that focuses on […]

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Intel's Z-Angle Memory (ZAM) is approaching completion as it races towards taking a bite at the AI boom while challenging HBM as a viable alternative. Intel's ZAM Challenges HBM As A Big Memory Innovation In the High-Bandwidth, High-Capacity Segment Offering 2x The Speed of HBM4 Z-Angle Memory or ZAM has been stirring up a lot of talk in the memory segment. The upcoming memory standard is being developed by Intel and SoftBank & aims to offer a low-power, high-density replacement to HBM. Now, new details have been shared that provide more insight into ZAM memory. For starters, the new memory […]

Read full article at https://wccftech.com/intel-zam-memory-threatens-hbms-ai-throne-with-2x-the-bandwidth-of-hbm4/